reco
Special ceramics
RCSC
Committed to the production, R&D, sales and related technical consulting services of silicon nitride ceramics and cermet materials
Committed to the production, research and development, sales and related technical consulting services of silicon nitride ceramics and cermet materials.
Heat dissipation substrate
Main specifications of ceramic substrate
| Specifications（mm） | ||||||
| Length * Width | 55*55 | 88*88 | 100*100 | 110*110 | 114.3*114.3 | |
| Thickness | 0.172，0.175，0.20，0.24，0.25，0.32，0.4，0.50，1...... | |||||
Note: Ruikete Pottery can be customized and developed according to user needs
Performance Characteristics of Main Materials of Silicon Nitride Ceramic Substrate
| Material Science number | density （g/cm³） | hardness Hv （Gpa） | Bending strength （Mpa） | fracture toughness （Mpa m1/2） | Thermal conductivity w/(m.k) | Young's modulus （Gpa） | Coefficient of thermal expansion (x10-6/K) | Volume resistivity （Ω.cm） | Anti breakdown voltage （Kv） |
| RCHS05 | 3.25 | 19~21 | 600~800 | 6~7 | 85~100 | 300~320 | 3 | ≥1014 | >15 |
| RCHS06 | 3.29 | 18~20 | 650~850 | 6~7 | 70~90 | 300~320 | 3 | ≥1014 | >15 |
Comparison of physical and mechanical properties of ceramic substrate materials:
| Substrate material | Silicon nitride (high thermal conductivity) | Aluminium nitride | alumina |
| strength/MPa | 600-800 | 350 | 400 |
| fracture toughness/（Mpa m1/2） | 6.0-8.0 | 2.7 | 3.0 |
| Thermal conductivityW/（m. k） | 80-100 | 150 | 20-30 |
| Current carrying capacity/A | ≥300 | 100-300 | ≤100 |
| thermal resistance/（℃/w） | ≤0.5 (0.5mCu) | ≤0.5 (0.3mmCu) | ≥1.0 (0.3mmCu) |
| reliability*/次 | ≥5000 | 200 | 300 |
| Use cost | high | higher | low |
Note: * Reliability test refers to the number of times that the material will not be damaged after cycling at - 40~+150 ℃
The hot pressing sintering process is adopted for Reykote ceramic silicon nitride substrate to ensure that the finished product is more compact, and the product has better consistency, flatness, strength, toughness, thermal conductivity and other indicators.
Product characteristics:
1. The strength and toughness are 2-3 times of that of aluminum nitride ceramic substrate;
2. It has better thermal expansion coefficient matching ability with gallium nitride, silicon carbide and silicon, and can be coated with thicker copper without ceramic cracking;
3. High thermal conductivity, high dielectric strength and good reliability.
Silicon nitride ceramic substrate has the characteristics of high strength, high heat conduction and high toughness. The circuit can be made on the surface by wet etching process. After coating on the surface, it can be made into substrate materials for high reliability electronic substrate module packaging. The products are widely used in high-power photoelectric and semiconductor device fields such as power transmitter, photovoltaic device, IGBT module, power thyristor, resonator base, semiconductor packaging carrier plate, etc.
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| Power transmitter | IGBT module |
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| Semiconductor packaging | Power type thyristor |
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